Chip scale package and related methods

ABSTRACT

Implementations of semiconductor packages may include: a die coupled to a glass lid; one or more inner walls having a first material coupled to the die; an outer wall having a second material coupled to the die; and a glass lid coupled to the die at the one or more inner walls and at the outer wall; wherein the outer wall may be located at the edge of the die and the glass lid and the one or more inner walls may be located within the perimeter of the outer wall at a predetermined distance from the perimeter of the outer wall; and wherein a modulus of the first material may be lower than a modulus of the second material.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a divisional application of the earlier U.S. Utilitypatent application to Bingzhi Su entitled “Chip Scale Package andRelated Methods,” application Ser. No. 15/210,716, filed Jul. 14, 2016,now pending, the disclosure of which is hereby incorporated entirelyherein by reference.

BACKGROUND 1. Technical Field

Aspects of this document relate generally to semiconductor packages suchas chip scale packages. More specific implementations involve chip scalepackages for image sensors.

2. Background

Conventionally, a chip scale package (CSP) is designed to be the samesize as, or nearly the same size as, the semiconductor die (chip)itself. Conventional CSP packages include various types of semiconductordie, including image sensors. Conventional packages for image sensorsinclude a lid over the portion of the die that includes the sensor arraythat allows the sensor array to be exposed to light.

SUMMARY

Implementations of semiconductor packages may include: a die coupled toa glass lid; one or more inner walls having a first material coupled tothe die; an outer wall having a second material coupled to the die; anda glass lid coupled to the die at the one or more inner walls and at theouter wall; wherein the outer wall may be located at the edge of the dieand the glass lid and the one or more inner walls may be located withinthe perimeter of the outer wall at a predetermined distance from theperimeter of the outer wall; and wherein a modulus of the first materialmay be lower than a modulus of the second material.

Implementations of semiconductors packages may include one, all, or anyof the following:

A maximum cavity wall stress on the outer wall and on the one or moreinner walls may be less than 40 MPa.

The semiconductor package may be capable of passing a moisturesensitivity level (MSL) 1 test.

The first material may be a dry film and the second material may be asolder mask.

Implementations of a semiconductor package may be formed using a methodof forming semiconductor packages. The method may include: providing aglass lid; patterning a first material on the glass lid; patterning asecond material on the glass lid; coupling a wafer to the glass lid atthe first material and at the second material; and forming one or moresemiconductor packages from the wafer and the glass lid by singulatingthe wafer and the glass lid; wherein the second material may form anouter wall at the edge of the glass lid and the wafer and the firstmaterial may form an inner wall inside the perimeter of the outer wallat a predetermined distance from the perimeter of the outer wall; andwherein a modulus of the first material may be lower than a modulus ofthe second material.

Implementations of a method of forming semiconductor packages mayinclude one, all or any of the following:

A maximum cavity wall stress on the outer wall and on the one or moreinner walls may be less than 40 MPa.

The semiconductor package may be capable of passing a moisturesensitivity level (MSL) 1 test.

The first material may be a dry film and the second material may be asolder mask.

Implementations of semiconductor packages may be manufactured using amethod for making semiconductor packages. The method may include:providing a wafer and a glass lid; patterning a first material to forman inner wall on the wafer; patterning a second material on the glasslid to form an outer wall; and coupling the glass lid with the wafer atthe first material and at the second material; wherein a modulus of thefirst material is lower than a modulus of the second material.

Implementation of a method of making semiconductor packages may includeone, all or any of the following:

A maximum cavity wall stress on the outer wall and on the one or moreinner walls may be less than 40 MPa.

The semiconductor package may be capable of passing a moisturesensitivity level (MSL) 1 test.

The first material may be a dry film and the second material may be asolder mask.

The foregoing and other aspects, features, and advantages will beapparent to those artisans of ordinary skill in the art from theDESCRIPTION and DRAWINGS, and from the CLAIMS.

BRIEF DESCRIPTION OF THE DRAWINGS

Implementations will hereinafter be described in conjunction with theappended drawings, where like designations denote like elements, and:

FIG. 1A is a perspective views of conventional semiconductor device witha single cavity wall;

FIG. 1B is a perspective view of another semiconductor device with twoconcentrically arranged cavity walls;

FIGS. 2A-2C show multiple views of a chip scale package (CSP);

FIG. 3 is a perspective view of an implementation of a multi-compositewall CSP;

FIG. 4A-4B shows the results of a stress test simulation on aconventional CSP having two cavity walls;

FIG. 5A-5B shows the results of a stress test simulation on animplementation of a multi-composite wall CSP having two cavity walls;

FIGS. 6A-6F shows a method for forming an implementation of amulti-composite wall CSP; and

FIGS. 7A-7D shows another method for forming an implementation of amulti-composite wall CSP.

DESCRIPTION

This disclosure, its aspects and implementations, are not limited to thespecific components, assembly procedures or method elements disclosedherein. Many additional components, assembly procedures and/or methodelements known in the art consistent with the intended chip scalepackage will become apparent for use with particular implementationsfrom this disclosure. Accordingly, for example, although particularimplementations are disclosed, such implementations and implementingcomponents may comprise any shape, size, style, type, model, version,measurement, concentration, material, quantity, method element, step,and/or the like as is known in the art for such chip scale packages, andimplementing components and methods, consistent with the intendedoperation and methods.

Referring to FIG. 1A, an example of a conventional chip scale package(CSP) 2 with a single cavity wall 4 is illustrated. The cavity wall 4serves to bond the lid of the package to the die and also preventsmoisture and other contaminants from entering the cavity between the dieand the lid. Referring to FIG. 1B, an example of a conventional CSP 6having a double wall design is illustrated. The conventional double walldesign uses the same material for both the inner wall 8 and outer wall10. Conventional wafer level CSP technology using a hard, high modulusmaterial such as solder mask as the cavity wall works well for smallpackages. However, when the package or cavity is larger, the packagedelaminates during reflow due to popcorn cracking. A cavity wallmaterial using a softer, low modulus material such as dry film worksbetter than a high modulus material for large packages. However, the lowmodulus material has issues during dicing of the packages caused by theinability of the low modulus material to prevent breakdown of the bondbetween the lid and the die during the stresses induced duringsingulation (such as sawing).

Referring to FIG. 2A, an exploded view of a CSP 12 is illustrated. TheCSP includes a glass lid 14, a cavity wall 16, a silicon layer (die orchip) 18, a passivation layer 20, a redistribution layer 22, solder maskfilm 24 and a ball grid array 26. As can be seen, these layers aredesigned to provide interconnections from the die or chip to themotherboard to which the package will be fastened while also allowingthe sensor portion of the chip 18 to be exposed to light through theglass. In this way, the package is able to convert the received lightinto electrical signals which are then processed either internal to thepackage or externally by an image processor in various implementations.In FIGS. 2B and 2C, a CSP is illustrated in an unexploded view with acutaway section. FIG. 2C shows how the layers of the package are bondedand fastened together to allow both for mechanical sealing of the layerstogether at the package edge as well as providing for electricalcoupling and signal routing of the layers within the package.

Referring to FIG. 3, an implementation of a multi-composite wall CSP 28is illustrated. This implementation has two cavity walls, an inner wall30 and an outer wall 32. The material of the inner wall 30 and the outerwall 32 are different from each other. The inner cavity wall 30 includesa low modulus material (soft), such as by non-limiting example, a dryfilm. For the exemplary purposes of this disclosure the dry film may bemanufactured by ShinEtsu MicroSi of Phoenix, Ariz. under the tradenameSINR-3170PFM and have a modulus of 150 MPa. The use of a low modulusmaterial for the inner wall acts to reduce stress in the inner cavityand accordingly reduce the stress at the bonding interface during reflowwhich helps to prevent delamination. The outer cavity wall 32 includes ahard, high modulus material, such as, by non-limiting example, soldermask, which has, by non-limiting example, a modulus of 4800 MPa. As canbe observed, the modulus of the low modulus material differs from thatof the high modulus material by an order of magnitude, though in variousimplementations, the difference between the modulus of the low modulusmaterial and the modulus of the high modulus material may be greater orless than this. In particular implementations, the modulus of the lowmodulus material is less than about 1000 MPa and the modulus of the highmodulus material is greater than about 3000 MPa. In otherimplementations, however, these values may differ, keeping the generalrelationship that the low modulus material is less than that of the highmodulus material.

The use of a high modulus material for the outer wall reinforces theedge of the package so that during the singulation process (particularlywhere the process involved sawing), the risk of the lid delaminatingfrom the die is reduced. The use of the high modulus material for theouter wall will serve to prevent cracks or chips at the edge of thepackage formed during sawing from propagating into the cavity, breachingthe seal on the cavity, and exposing the cavity to moisture or othercontaminants. The cavity walls 30 and 32 may take any of a wide varietyof closed shapes, including, by non-limiting example, square,rectangular, circular, ellipsoidal, polygonal, or any other closedshape. In various implementations, the edge of each of the cavity walls30 and 32 may include various patterns, including zig-zagged, flat,undulating, etc. In various implementations, more than one inner cavitywall may be included, providing for designs that have three or morecavity walls where the inner cavity walls are made of differentmaterial(s) with moduli less than the outer cavity wall. In particularimplementations, the inner cavity walls may include materials ofdifferent moduli from each other, each less than the modulus of thematerial forming the outer cavity wall.

Referring to FIGS. 4A-4B, the results from a stress simulation on aconventional CSP 34 with two cavity walls, each made of the same highmodulus material are illustrated. As can be observed from FIG. 4A, themaximum predicted stress of the cavity walls is 92.39 MPa. In FIGS.5A-5B, the results from a stress simulation on an implementation of amulti-composite CSP 40 having two cavity walls with an inner wall madeof a lower modulus material than the outer wall is illustrated. Byinspection, the maximum predicted stress of the cavity walls in FIG. 5Ais 35.04 MPa, about 30% of the stress of the conventional CSP. The totalpackage size for both 34 and 40 in the simulation is 7 mm×6 mm and theinner cavity of the packages 34 and 40 are 5.5 mm×4.25 mm. Theconventional CSP 34 used a conventional solder mask as the cavity wallfor both the outer wall 36 and the inner wall 38. The implementation ofthe multi-composite wall CSP 40 used a conventional solder mask as theouter cavity wall 42 and dry film manufactured by ShinEtsu under thetradename SINR-3170PFM as the inner cavity wall 44. For the purposes ofthe simulation, both packages 34 and 40 are were subjected to thethermal cycling of the same reflow process. The resulting stress on thesilicon of the CSP is illustrated in FIGS. 4B and 5B. The stress is alsodecreased on the silicon of the package as illustrated in FIGS. 4B and5B. The conventional CSP 50 has a maximum silicon stress of 445 MPawhile the maximum silicon stress of the multi-composite CSP 52 is only418 MPa.

The ability to reduce the maximum stress experienced by a cavity wall by70% by using a cavity wall that has a lower material modulus is an goodresult in view of what is currently known about conventional CSPs thatemploy two cavity walls with the same high modulus material.

The conventional CSP package in the simulation cannot pass the moisturesensitivity level (MSL) 3 test due to the high stress in the cavity walland at the bonding interface. In contrast, the multi-composite CSP 52 inthis simulation could pass the MSL3 test and even the MSL 1 test becauseof the reduced stress in the cavity wall and at the bonding interface.

The moisture/reflow sensitivity level (MSL) is a standard for the timeperiod in which a moisture sensitive device can be exposed to ambientroom conditions before moisture seeps into the device. Moisture trappedinside a device can expand and result in delamination, condensation onthe interior of the glass, wire bond damage, die damage, internalcracks, bulging and popping. The MSL determines how long the CSP may beout of its original moisture sensitive bag before being mounted andreflowed. An MSL 3 device must be reflowed within 168 hours of removalfrom the bag while an MSL 1 device has an unlimited floor life out ofthe bag. Since CSP packages like those disclosed herein can pass the MSL1 test, they may have far greater flexibility of use and maysignificantly reduce risk of reliability failures in the field due tomoisture infiltration.

Referring to FIGS. 6A-6F, an implementation of a first method forforming an implementation of a multi-composite wall CSP is illustrated.In FIG. 6A, a glass lid 54 is provided. In FIGS. 6B-6C, a first material56 is patterned on the glass lid 54 to form the structure of an innercavity wall. In FIGS. 6D-6E, a second material 58 is formed on the glasslid 54 by being coated over the pattern of the first material and thenpatterned to form an outer cavity wall after removal of the excessmaterial. The process of patterning the first material 56 and the secondmaterial 58 could be carried out, by non-limiting example, by stencilprinting, photolithography, masking, etching, application of preformedstencils, any combination thereof, or any other method of forming thelayer. In FIG. 6F, a wafer 60 is coupled to the glass lid 54 at thefirst material 56 and at the second material 58 to bond the wafer 60 tothe lid 54. In an alternate implementation, the first material 56 andsecond material 58 may be patterned on the wafer 60 and the glass lid 54may be coupled to the wafer 60 at the first material 56 and the secondmaterial 58. The one or more semiconductor packages are then formed fromthe wafer 60 and glass lid 54 by singulation of the packages, which maybe done by sawing, laser cutting, or any other method of singulatingsemiconductor devices. The second material 58 forms an outer wall at theedge of the glass lid 54 and the wafer 60. The first material 56 formsan inner wall inside the perimeter of the outer wall at a predetermineddistance from the perimeter of the outer wall. As previously disclosed,more than one inner wall may be formed in various implementations. Also,the modulus of the first material is lower than the modulus of thesecond material forming the outer wall.

Referring to FIGS. 7A-7D, a second implementation of a method forforming a semiconductor package is illustrated. Referring to FIGS. 7Aand 7C, a wafer 62 is provided and a first material 64 is patternedusing any of the techniques disclosed herein to form an inner wall onthe wafer 62. Referring to FIG. 7B, a glass lid 66 is provided and asecond material 68 is patterned on the glass lid 66 to form an outercavity wall. As illustrated in FIGS. 7C-7D, the glass lid 66 is thencoupled with the wafer 62 at the first material 64 and at the secondmaterial 68. As previously discussed, the modulus of the first materialis lower than the modulus of the second material. By non-limitingexample, the first material is a dry film and the second material is asolder mask. Multiple inner walls may be formed in implementations ofthe method as previously disclosed.

In places where the description above refers to particularimplementations of chip scale packages and implementing components,sub-components, methods and sub-methods, it should be readily apparentthat a number of modifications may be made without departing from thespirit thereof and that these implementations, implementing components,sub-components, methods and sub-methods may be applied to other chipscale packages.

What is claimed is:
 1. A method for forming a semiconductor package, themethod comprising: providing a glass lid; patterning a first material onthe glass lid; patterning a second material on the glass lid; coupling awafer to the glass lid at the first material and at the second material;and forming one or more semiconductor packages from the wafer and theglass lid by singulating the wafer and the glass lid; wherein the secondmaterial forms an outer wall at the edge of the glass lid and the waferand the first material forms an inner wall inside the perimeter of theouter wall at a predetermined distance from the perimeter of the outerwall; and wherein a modulus of the first material is lower than amodulus of the second material.
 2. The method of claim 1, wherein amaximum cavity wall stress on the outer wall and on the one or moreinner walls is less than 40 MPa.
 3. The method of claim 1, wherein thesemiconductor package is capable of passing a moisture sensitivity level(MSL) 1 test.
 4. The method of claim 1, wherein the first material is adry film and the second material is a solder mask.
 5. A method formaking a semiconductor package, the method comprising: providing a waferand a transparent lid; patterning a first material to form an inner wallon the wafer; patterning a second material on the transparent lid toform an outer wall; and coupling the transparent lid with the wafer atthe first material and at the second material; wherein a modulus of thefirst material is lower than a modulus of the second material.
 6. Themethod of claim 5, wherein a maximum cavity wall stress on the outerwall and on the one or more inner walls is less than 40 MPa.
 7. Themethod of claim 5, wherein the semiconductor package is capable ofpassing a moisture sensitivity level (MSL) 1 test.
 8. The method ofclaim 5, wherein the first material is a dry film and the secondmaterial is a solder mask.
 9. A method for forming a semiconductorpackage, the method comprising: providing a transparent lid; patterninga first material on the transparent lid; patterning a second material onthe transparent lid; coupling a wafer to the transparent lid at thefirst material and at the second material; and forming one or moresemiconductor packages from the wafer and the transparent lid bysingulating the wafer and the glass lid; wherein the second materialforms an outer wall at the edge of the transparent lid and the wafer andthe first material forms an inner wall inside the perimeter of the outerwall at a predetermined distance from the perimeter of the outer wall;and wherein a modulus of the first material is lower than a modulus ofthe second material.
 10. The method of claim 9, wherein a maximum cavitywall stress on the outer wall and on the one or more inner walls is lessthan 40 MPa.
 11. The method of claim 9, wherein the semiconductorpackage is capable of passing a moisture sensitivity level (MSL) 1 test.12. The method of claim 9, wherein the first material is a dry film andthe second material is a solder mask.